ROHM Semiconductor Automotive Ignition IGBTs

ROHM Semiconductor Automotive Ignition IGBTs with low collector-emitter saturation voltage are suitable for the ignition coil and solenoid driver circuits. The IGBT transistors feature high self-clamped inductive switching energy, built-in gate-emitter protection diode, and built-in gate-emitter resistance. These IGBT transistors operate at -40ºC to 175ºC and -55ºC to 175ºC storage temperature. The devices are housed in 3-pin TO-252 and TO263S packages and are a highly reliable product for automotive.

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ROHM Semiconductor Automotive Ignition IGBTs

Features

  • Low collector-emitter saturation voltage
  • High self-clamped inductive switching energy
  • Built-in gate-emitter protection diode
  • Built-in gate-emitter resistance
  • -40ºC to 175ºC operating junction temperature
  • -55ºC to 175ºC storage temperature
  • Qualified to AEC-Q101
  • Pb-free leading plating
  • RoHS compliant

Applications

  • Ignition coil driver circuits
  • Solenoid driver circuits
Published: 2018-01-03 | Updated: 2023-09-07