IXYS IXYxN120A4 XPT™ GenX4™ IGBTs

IXYS IXYxN120A4 XPT™ GenX4™ IGBTs are the 4th generation Trench IGBTs that feature XPT thin-wafer technology. These ultra-low V_SAT IGBT transistors support switching frequencies up to 5kHz and are optimized for low conduction losses. The IXYxN120A IGBTs offer advantages such as high power density, a low gate drive requirement, and an operating temperature from -55°C to +175°C. These transistors come in TO-247 and TO-269HV packages, each featuring a voltage of 1200V and a current of 55A or 85A. The IXYxN120A IGBTs are used in applications such as power inverters, motor drives, PFC circuits, battery chargers, welding machines, lamp ballasts, and inrush current protector circuits.