2EDL05I06BF

Infineon Technologies
726-2EDL05I06BF
2EDL05I06BF

Mfr.:

Description:
Gate Drivers 600V high & low-side 0.7A,integrated BSD

Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
24 Weeks Estimated factory production time.
Minimum: 2500   Multiples: 2500
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
This Product Ships FREE

Pricing (GBP)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 2500)
£0.422 £1,055.00
£0.41 £2,050.00

Alternative Packaging

Mfr. Part No.:
2EDL05I06BFXUMA1
Packaging:
Reel, Cut Tape
Availability:
In Stock
Price:
£0.90
Min:
1

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: Gate Drivers
RoHS:  
Half-Bridge Drivers
Half-Bridge
SMD/SMT
SOIC-14
1 Driver
1 Output
360 mA
13 V
17.5 V
Inverting
48 ns
24 ns
+ 150 C
Infineon SOI
Reel
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Logic Type: CMOS, LSTTL
Maximum Turn-Off Delay Time: 590 ns
Maximum Turn-On Delay Time: 610 ns
Moisture Sensitive: Yes
Pd - Power Dissipation: 850 mW
Product Type: Gate Drivers
Propagation Delay - Max: 610 ns
Shutdown: Shutdown
Factory Pack Quantity: 2500
Subcategory: PMIC - Power Management ICs
Technology: Si
Tradename: EiceDRIVER
Part # Aliases: SP001070344 2EDL05I06BFXUMA1
Unit Weight: 80.260 mg
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Datasheet

Product Catalogs

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CNHTS:
8542319090
USHTS:
8542310075
ECCN:
EAR99

Small Home Appliance Solutions

Infineon Small Home Appliance Solutions features a portfolio of products that fit into small home appliance applications. There is a growing trend for style and more efficiency, which designers are addressing with countless variations. Energy-efficient, modern-looking, wipe-clean, and hermetically sealed surfaces are only a few characteristics that a design engineer has to consider and incorporate into new designs. Infineon delivers solutions for several key areas, such as induction heating, as well as appliances that require motor control solutions with energy-efficient, integrated power devices.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

Fast DC EV Charging Solutions

Infineon Technologies Fast DC Electric Vehicle (EV) Charging Solutions address the needs for e-mobility. With the ever-growing number of electric vehicles on the market and pressure from governments to reduce vehicle emissions to zero by 2050, there is a great need for more efficient charging solutions. As various consumer studies show, the acceptance of electromobility depends largely on the availability and duration of the charging process. High-power DC charging stations are the answer to these market requirements. Today, a typical electric vehicle can charge about 80% of its battery capacity in less than 10 minutes. This is comparable to refueling a conventional car with an internal combustion engine. Infineon helps bring energy-efficient DC fast-charging designs to life. Benefit from a comprehensive, ready-to-implement one-stop product and design portfolio that covers the entire product range from power conversion, microcontrollers, security, auxiliary power supply, and communication.

Silicon-on-Insulator (SOI) Gate Driver ICs

Infineon Silicon-on-Insulator (SOI) Gate Driver ICs are level-shift high voltage gate driver ICs for IGBTs and MOSFETs. The SOI technology is a high-voltage, level-shift technology providing unique, measurable, and best-in-class advantages. These include integrated bootstrap-diode (BSD) and industry best-in-class robustness to protect against negative transient voltage spikes. Each transistor is isolated by buried silicon dioxide, which eliminates the parasitic bipolar transistors that are causing latch-up. This technology can also lower the level-shift power losses to minimize device-switching power dissipation. The advanced process allows monolithic high-voltage and low-voltage circuitry construction with technology-enhanced benefits.

EiceDRIVER™ Isolated & Non-Isolated Gate Drivers

Infineon EiceDRIVER™ Isolated and Non-Isolated Gate Drivers provide optimized low- and high-voltage gate driver solutions for MOSFETs, IGBTs, and IGBT modules. These isolated and non-isolated gate driver ICs are designed to build reliable and efficient applications. An optimum gate drive configuration is essential for all power switches, whether they are in discrete form or in a power module. Infineon gate drivers provide a wide range of typical output current options, from 0.1A up to 10A, suitable for any power device size.

Infineon Automatic Opening Systems

Infineon Automatic Opening Systems incorporate smart sensors, motor controls, supplies and battery management to automate sliding, swing or garage doors, sun blinds, and gates. When automated, these doors manage opening actions, avoid unintentional opening, control speed and torque, detect objects along paths, as well as perform other functions.

Half-Bridge Gate Driver ICs

Infineon Technologies Half-Bridge Gate Driver ICs are based on level-shifter Silicon On Insulator (SOI) technology. This technology integrates a low-ohmic ultrafast bootstrap diode and supports higher efficiency and smaller form factors of applications.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

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