501 SiC MOSFETs

Results: 18
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename
onsemi SiC MOSFETs 750V/18MOSICFETG4TO263-7

SMD/SMT D2PAK-7 N-Channel 1 Channel 750 V 72 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 259 W Enhancement SiC FET
Wolfspeed SiC MOSFETs SiC, MOSFET, 350mO,1200V, TO-247-3, Industrial 3,481In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 7.6 A 455 mOhms - 8 V, + 19 V 3.6 V 19 nC - 55 C + 150 C 50 W Enhancement
onsemi SiC MOSFETs 750V/18MOSICFETG4TO247-4 638In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
onsemi SiC MOSFETs 750V/18MOSICFETG4TOLL

SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 53 A 18 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 349 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/11MOSICFETG4TO263-7

SMD/SMT D2PAK-7L N-Channel 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/11MOSICFETG4TO247-4 536In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 750 V 104 A 11 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 357 W Enhancement SiC FET
onsemi SiC MOSFETs 750V/18MOSICFETG4TO247 164In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 750 V 81 A 23 mOhms - 20 V, + 20 V 6 V 37.8 nC - 55 C + 175 C 385 W Enhancement AEC-Q101 SiC FET
Wolfspeed SiC MOSFETs SiC, MOSFET, 350mO,1200V, TO-263-7, Industrial 117In Stock
Min.: 1
Mult.: 1

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 7.2 A 455 mOhms - 8 V, + 19 V 3.6 V 13 nC - 55 C + 150 C 40.8 W Enhancement
WeEn Semiconductors SiC MOSFETs WNSC2M150120R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 29 A 150 mOhms - 4 V, + 18 V 3.5 V 40 nC - 55 C + 175 C 234 W Enhancement
onsemi SiC MOSFETs 750V/10MOSICFETG4TOLL
SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 106 A 10.7 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 556 W Enhancement SiC FET
WeEn Semiconductors SiC MOSFETs WNSC2M150120B7/TO263-7L/REEL 13\" Q1/T1 *STANDARD MARK SMD

SMD/SMT TO-263-7L N-Channel 1 Channel 1.2 kV 28.7 A 150 mOhms - 4 V, + 18 V 3.5 V 40 nC - 55 C + 175 C 231 W Enhancement
WeEn Semiconductors SiC MOSFETs WNSC2M150120W/SOT429/STANDARD MARKING * HORIZONTAL, RAIL PACK

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 23.4 A 150 mOhms - 4 V, + 18 V 3.5 V 40 nC - 55 C + 175 C 153 W Enhancement
Wolfspeed SiC MOSFETs SiC, MOSFET, 350mO,1200V, TO-263-7 T&R, Industrial Non-Stocked
Min.: 1
Mult.: 1
: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 7.2 A 350 mOhms - 4 V, + 15 V 3.6 V 13 nC - 55 C + 150 C 40.8 W Enhancement
onsemi SiC MOSFETs UJ4SC075010L8S

SMD/SMT MO-229-8 N-Channel 1 Channel 750 V 106 A 10.7 mOhms - 20 V, + 20 V 5.5 V 75 nC - 55 C + 175 C 556 W Enhancement SiC FET
WeEn Semiconductors WNSC2M150120B7-A6J
WeEn Semiconductors SiC MOSFETs WNSC2M150120B7-A/TO263-7L/REEL 13\" Q1/T1 *STANDARD MARK SMD

WeEn Semiconductors WNSC2M150120R-A6Q
WeEn Semiconductors SiC MOSFETs WNSC2M150120R-A/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK

WeEn Semiconductors WNSC2M150120W-A6Q
WeEn Semiconductors SiC MOSFETs WNSC2M150120W-A/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK

WeEn Semiconductors WNSC2M150120TB6J
WeEn Semiconductors SiC MOSFETs WNSC2M150120TB/TSPAK/REEL 13\" Q1/T1 *STANDARD MARK SMD