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IMZA120R020M1HXKSA1

Name: Infineon IMZA120R020M1HXKSA1
Brand: Infineon Technologies
SKU: 726-IMZA120R020M1HXK
Price: 14.27 GBP
Availability: InStock

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Mouser No:

726-IMZA120R020M1HXK

Mfr. No:

IMZA120R020M1HXKSA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs CoolSiC 1200 V, 20 mohm SiC Trench MOSFET in TO247-4 package

Datasheet:

IMZA120R020M1HXKSA1 Datasheet (PDF)

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In Stock: 2,813

Stock:: 2,813

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On Order:: 357
Factory Lead Time:: 30

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£14.27	£14.27
	£9.51	£95.10

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	98 A
Rds On - Drain-Source Resistance:	19 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	4.2 V
Qg - Gate Charge:	83 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Country of Assembly:	CN
Country of Diffusion:	Not Available
Country of Origin:	AT
Packaging:	Tube
Product:	MOSFETs
Product Type:	SiC MOSFETS
Factory Pack Quantity:	240
Subcategory:	Transistors
Technology:	SiC
Part # Aliases:	IMZA120R020M1H SP005448293

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Datasheet

IMZA120R020M1HXKSA1 Datasheet (PDF)

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

CoolSiC™ 1200V SiC Trench MOSFETs

Infineon Technologies CoolSiC™ 1200V SiC Trench MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC 1200V SiC Trench MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high-temperature and harsh environment operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency.