2912 SiC MOSFETs

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode

Nexperia SiC MOSFETs NSF040120L4A0/SOT8071/TO247-4L

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 65 A 60 mOhms - 10 V, + 22 V 2.9 V 95 nC - 55 C + 175 C 306 W Enhancement
WeEn Semiconductors WNSC2M40140R-D6Q
WeEn Semiconductors SiC MOSFETs WNSC2M40140R-D/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK