4404 MOSFETs

Results: 6
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename Packaging
Infineon Technologies MOSFETs N-Ch 60V 180A D2PAK-6 OptiMOS 3 5,482In Stock
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT TO-263-7 N-Channel 1 Channel 60 V 180 A 1.3 mOhms - 20 V, 20 V 2 V 275 nC - 55 C + 175 C 250 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Panjit MOSFETs 30V N-Channel Enhancement Mode MOSFET Non-Stocked Lead-Time 36 Weeks
Min.: 5,000
Mult.: 5,000
: 5,000

Si 30 V 60 A 6 mOhms - 20 V, 20 V 2.5 V 12 nC AEC-Q101 Reel
Panjit MOSFETs 30V N-Channel Enhancement Mode MOSFET Non-Stocked Lead-Time 36 Weeks
Min.: 5,000
Mult.: 5,000
: 5,000

Si 30 V 60 A 6 mOhms - 20 V, 20 V 2.5 V 12 nC Reel
Infineon Technologies MOSFETs N-Ch 60V 180A D2PAK-6 OptiMOS 3 192In Stock
Min.: 1
Mult.: 1
: 1,000

Si SMD/SMT TO-263-7 N-Channel 1 Channel 60 V 180 A 1.3 mOhms - 20 V, 20 V 2 V 275 nC - 55 C + 175 C 250 W Enhancement OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs N-Ch 60V 180A D2PAK-6 OptiMOS 3 Non-Stocked Lead-Time 11 Weeks
Min.: 1,000
Mult.: 1,000
: 1,000

Si SMD/SMT TO-263-7 N-Channel 1 Channel 60 V 180 A 1.3 mOhms - 20 V, 20 V 2 V 275 nC - 55 C + 175 C 250 W Enhancement OptiMOS Reel
Infineon Technologies BSC0580NSATMA1
Infineon Technologies MOSFETs IFX FET 15V-30V

Si SMD/SMT TDSON-8 N-Channel 1 Channel 30 V 186 A 1.3 mOhms - 20 V, 20 V 2 V 39 nC - 55 C + 150 C 69 W Enhancement Reel