BUK9Q50-100LJ

Nexperia
771-BUK9Q50-100LJ
BUK9Q50-100LJ

Mfr.:

Description:
MOSFETs BUK9Q50-100L/SOT8002/MLPAK33

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 360

Stock:
360 Can Dispatch Immediately
Factory Lead Time:
53 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£0.592 £0.59
£0.368 £3.68
£0.239 £23.90
£0.183 £91.50
£0.165 £165.00
Full Reel (Order in multiples of 3000)
£0.14 £420.00
£0.129 £774.00
£0.126 £1,134.00

Product Attribute Attribute Value Select Attribute
Nexperia
Product Category: MOSFETs
RoHS:  
Reel
Cut Tape
Brand: Nexperia
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: MOSFETs
Factory Pack Quantity: 3000
Subcategory: Transistors
Part # Aliases: 934670298118 934670000000
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Attributes selected: 0

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

BUK9Q N-Channel Trench MOSFET

Nexperia BXK9Q29-60A N-Channel Trench MOSFET is an enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) SMD plastic package using Trench MOSFET technology. This N-channel MOSFET is logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C. The BXK9Q29-60A trench MOSFET features a 60V maximum drain-source voltage, 84A maximum peak drain current, and 27W maximum total power dissipation. This N-channel MOSFET also features a 23.7mΩ typical drain-source on-state resistance, 25mJ maximum non-repetitive drain-source avalanche energy, and 15.8A maximum non-repetitive avalanche current. The BXK9Q29-60A trench MOSFET is EU/CN RoHS-compliant. Typical applications include LED lighting, switching circuits, and DC-DC conversion.