HiPerFET Series MOSFETs

Results: 105
Select Image Part # Mfr. Description Datasheet Availability Pricing (GBP) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
IXYS MOSFETs TO247 300V 56A N-CH X3CLASS 177In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 300 V 56 A 27 mOhms - 20 V, 20 V 2.5 V 56 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube

IXYS MOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A 188In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 6 A 2.75 Ohms - 30 V, 30 V 5 V 92 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube
IXYS MOSFETs Q3Class HiPerFET Pwr MOSFET 1000V/24A 7In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 1 kV 24 A 440 mOhms - 30 V, 30 V 3.5 V 140 nC - 55 C + 150 C 1 kW Enhancement HiPerFET Tube
IXYS MOSFETs TO220 300V 26A N-CH X3CLASS 8In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 26 A 66 mOhms - 20 V, 20 V 2.5 V 22 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 300V 38A N-CH X3CLASS 218In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 300 V 38 A 50 mOhms - 20 V, 20 V 4.5 V 35 nC - 55 C + 150 C 240 W Enhancement HiPerFET Tube
IXYS MOSFETs TO220 1KV 4A N-CH POLAR 407In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 N-Channel 1 Channel 1 kV 2.1 A 3.3 Ohms - 20 V, 20 V 3 V 26 nC - 55 C + 150 C 40 W Enhancement HiPerFET Tube
IXYS MOSFETs 120 Amps 200V 0.022 Rds
1,075On Order
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 200 V 120 A 22 mOhms - 20 V, 20 V 5 V 152 nC - 55 C + 175 C 714 W Enhancement HiPerFET Tube

IXYS MOSFETs 12 Amps 1000V 1.05 Rds
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 12 A 1.05 Ohms - 20 V, 20 V 5.5 V 77 nC - 55 C + 150 C 300 W Enhancement Tube
IXYS MOSFETs IXFA12N65X2 TRL Non-Stocked Lead-Time 27 Weeks
Min.: 800
Mult.: 800
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 12 A 310 mOhms - 30 V, 30 V 3 V 18.5 nC - 55 C + 150 C 180 W Enhancement Reel
IXYS MOSFETs IXFA20N85XHV TRL Non-Stocked Lead-Time 27 Weeks
Min.: 800
Mult.: 800
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 850 V 20 A 330 mOhms - 30 V, 30 V 3.5 V 63 nC - 55 C + 150 C 540 W Enhancement Reel
IXYS MOSFETs IXFA22N65X2 TRL Non-Stocked Lead-Time 27 Weeks
Min.: 800
Mult.: 800
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 22 A 145 mOhms - 30 V, 30 V 3.5 V 37 nC - 55 C + 150 C 390 W Enhancement Reel
IXYS MOSFETs IXFA34N65X2 TRL Non-Stocked Lead-Time 27 Weeks
Min.: 800
Mult.: 800
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 34 A 100 mOhms - 30 V, 30 V 3.5 V 56 nC - 55 C + 150 C 540 W Enhancement Reel
IXYS MOSFETs IXFA3N120 TRL Non-Stocked Lead-Time 32 Weeks
Min.: 800
Mult.: 800
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms - 20 V, 20 V 2.5 V 39 nC - 55 C + 150 C 200 W Enhancement Reel
IXYS MOSFETs IXFA3N120 TRR Non-Stocked Lead-Time 32 Weeks
Min.: 800
Mult.: 800
: 800

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 3 A 4.5 Ohms - 20 V, 20 V 2.5 V 39 nC - 55 C + 150 C 200 W Enhancement Reel
IXYS MOSFETs TO263 200V 50A N-CH X3CLASS Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50
Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 50 A 30 mOhms - 20 V, 20 V 2.5 V 33 nC - 55 C + 150 C 240 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-263D2 Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 72 A 20 mOhms - 20 V, 20 V 2.5 V 55 nC - 55 C + 150 C 320 W Enhancement HiPerFET Tube
IXYS MOSFETs IXFA72N30X3 TRL Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 300 V 72 A 19 mOhms - 20 V, 20 V 2.5 V 82 nC - 55 C + 150 C 390 W Enhancement Reel, Cut Tape, MouseReel
IXYS MOSFETs TO263 200V 90A N-CH X3CLASS Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT TO-263-3 N-Channel 1 Channel 200 V 90 A 12.8 mOhms - 20 V, 20 V 2.5 V 78 nC - 55 C + 150 C 390 W Enhancement HiPerFET Tube
IXYS MOSFETs DiscMSFT NChUltrJnctn X3Class TO-263D2 Non-Stocked
Min.: 800
Mult.: 800
: 800
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 200 V 90 A 12.8 mOhms - 20 V, 20 V 2.5 V 78 nC - 55 C + 150 C 390 W Enhancement Reel

IXYS MOSFETs HiPerRF Power Mosfet 1000V 6A Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 1 kV 6 A 1.9 Ohms - 20 V, 20 V - 55 C + 150 C 180 W Enhancement Tube
IXYS MOSFETs 180 Amps 70V 0.006 Rds Non-Stocked Lead-Time 26 Weeks
Min.: 25
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 70 V 180 A 6 mOhms - 20 V, 20 V - 55 C + 150 C 560 W Enhancement HiPerFET Tube
IXYS MOSFETs 27 Amps 800V 0.32 Rds Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 800 V 27 A 320 mOhms - 20 V, 20 V 4.5 V 170 nC - 55 C + 150 C 500 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 36A Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 25

Si Through Hole TO-264-3 N-Channel 1 Channel 600 V 36 A 190 mOhms - 30 V, 30 V 3 V 102 nC - 55 C + 150 C 650 W Enhancement HiPerFET Tube
IXYS MOSFETs DIODE Id48 BVdass500 Non-Stocked Lead-Time 37 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-264-3 N-Channel 1 Channel 500 V 48 A 100 mOhms - 20 V, 20 V - 55 C + 150 C 500 W Enhancement HyperFET Tube
IXYS MOSFETs TO220 200V 36A N-CH X3CLASS Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 200 V 36 A 45 mOhms - 20 V, 20 V 2.5 V 21 nC - 55 C + 150 C 170 W Enhancement HiPerFET Tube