GP3T016A120H

SemiQ
148-GP3T016A120H
GP3T016A120H

Mfr.:

Description:
SiC MOSFETs Gen3 1200V, 16mohm SiC MOSFET, TO-247-4L

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£9.38 £9.38
£6.57 £65.70
£5.36 £643.20

Product Attribute Attribute Value Select Attribute
SemiQ
Product Category: SiC MOSFETs
RoHS:  
Through Hole
TO-247-4L
N-Channel
1 Channel
1.2 kV
350 A
23 mOhms
- 4.5 V, + 18 V
4 V
260 nC
- 55 C
+ 175 C
484 W
Enhancement
Brand: SemiQ
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 20 ns
Forward Transconductance - Min: 29 S
Packaging: Tube
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 25 ns
Series: GP3T
Factory Pack Quantity: 30
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Type: SiC MOSFET
Typical Turn-Off Delay Time: 65 ns
Typical Turn-On Delay Time: 21 ns
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Attributes selected: 0

Datasheet

USHTS:
8541100080
ECCN:
EAR99

GEN3 1200V SiC MOSFET Discrete Devices

SEMiQ GEN3 1200V SiC MOSFET Discrete Devices are third-generation SiC MOSFETs and are 20% smaller than SEMiQ’s second-generation SiC MOSFETs. These devices have been developed to increase performance and cut switching losses in high-voltage applications.

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