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TK16J60W,S1VE

Name: Toshiba TK16J60W,S1VE
Brand: Toshiba
SKU: 757-TK16J60WS1VE
Price: 4.9 GBP
Availability: InStock

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Mouser No:

757-TK16J60WS1VE

Mfr. No:

TK16J60W,S1VE

Mfr.:

Toshiba

Description:

MOSFETs TO-3PN PD=130W 1MHz PWR MOSFET TRNS

Datasheet:

TK16J60W,S1VE Datasheet (PDF)

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Qty.	Unit Price	Ext. Price
	£4.90	£4.90
	£3.47	£34.70
	£2.40	£240.00
	£2.36	£1,180.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-3PN-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	15.8 A
Rds On - Drain-Source Resistance:	190 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3.7 V
Qg - Gate Charge:	38 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	130 W
Channel Mode:	Enhancement
Tradename:	DTMOSIV
Packaging:	Tray
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	25 ns
Factory Pack Quantity:	25
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	100 ns
Typical Turn-On Delay Time:	50 ns
Unit Weight:	4.600 g

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Datasheet

TK16J60W,S1VE Datasheet (PDF)

Application Notes

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Reliability Tests Report

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R_DS(on) makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

TK16x60W Si N-Channel MOSFETs (DTMOSIV)

Toshiba TK16x60W Si N-Channel MOSFETs (DTMOSIV) exhibit the chip design of DTMOSIV generation and come in different variants. The Si N-channel MOSFETs feature low drain-source on-resistance and fast reverse recovery time. These MOSFETs can easily control gate switching. The TK16x60W MOSFETs are available in different dimensions and come in other packages, including DFN8x8, TO-247, TO-3P(N), D2PAK, TO-220, and TO-220SIS. These Toshiba TK16x60W Si N-Channel MOSFETs are used in switching voltage regulators.