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TK16G60W5,RVQ

Name: Toshiba TK16G60W5,RVQ
Brand: Toshiba
SKU: 757-TK16G60W5RVQ
Price: 3.6 GBP
Availability: InStock

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Mouser No:

757-TK16G60W5RVQ

Mfr. No:

TK16G60W5,RVQ

Mfr.:

Toshiba

Description:

MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=130W F=1MHZ

Datasheet:

TK16G60W5,RVQ Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TK16G60W5,RVQ

In Stock: 966

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Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£3.60	£3.60
	£2.39	£23.90
	£1.70	£170.00
	£1.61	£805.00
Full Reel (Order in multiples of 1000)
	£1.50	£1,500.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	15.8 A
Rds On - Drain-Source Resistance:	230 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	43 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	130 W
Channel Mode:	Enhancement
Tradename:	DTMOSIV
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	5 ns
Product Type:	MOSFETs
Rise Time:	40 ns
Series:	TK16G60W
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	100 ns
Typical Turn-On Delay Time:	75 ns
Unit Weight:	1.590 g

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Datasheet

TK16G60W5,RVQ Datasheet (PDF)

Application Notes

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Reliability Tests Report

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

DTMOSIV Series MOSFETs

Toshiba DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, which provides a 30% reduction in R_DS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the R_DS(on) makes it possible to house lower R_DS(on) chips in the same packages. This helps to improve efficiency and reduce the size of power supplies. Toshiba DTMOSIV MOSFETs are ideal for use with switching regulators.

TK16x60W Si N-Channel MOSFETs (DTMOSIV)

Toshiba TK16x60W Si N-Channel MOSFETs (DTMOSIV) exhibit the chip design of DTMOSIV generation and come in different variants. The Si N-channel MOSFETs feature low drain-source on-resistance and fast reverse recovery time. These MOSFETs can easily control gate switching. The TK16x60W MOSFETs are available in different dimensions and come in other packages, including DFN8x8, TO-247, TO-3P(N), D2PAK, TO-220, and TO-220SIS. These Toshiba TK16x60W Si N-Channel MOSFETs are used in switching voltage regulators.