SGT350R70GTK

STMicroelectronics
511-SGT350R70GTK
SGT350R70GTK

Mfr.:

Description:
GaN FETs 700 V, 270 mOhm typ., 6 A, e-mode PowerGaN transistor
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New Product:
New from this manufacturer.
Datasheet:
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In Stock: 677

Stock:
677 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2500)

Pricing (GBP)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
£1.23 £1.23
£0.826 £8.26
£0.69 £69.00
£0.664 £332.00
£0.643 £643.00
Full Reel (Order in multiples of 2500)
£0.619 £1,547.50
£0.598 £2,990.00
† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: GaN FETs
RoHS:  
SMD/SMT
DPAK-3
700 V
6 A
350 mOhms
- 1.4 V, + 7 V
2.5 V
1.5 nC
- 55 C
+ 150 C
47 W
Enhancement
Brand: STMicroelectronics
Configuration: Single
Country of Assembly: CN
Country of Diffusion: Not Available
Country of Origin: CN
Fall Time: 6.1 ns
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: FET
Product Type: GaN FETs
Rise Time: 3.5 ns
Series: SGT
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: GaN
Type: PowerGaN Transistor
Typical Turn-Off Delay Time: 1.2 ns
Typical Turn-On Delay Time: 0.9 ns
Unit Weight: 300 mg
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Attributes selected: 0

Datasheet

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

SGT350R70GTK E-Mode PowerGaN Transistor

STMicroelectronics SGT350R70GTK E-Mode PowerGaN Transistor is a high-performance enhancement-mode PowerGaN transistor optimized for efficient power conversion in demanding applications. With a drain-source voltage rating of 700V and a maximum on-resistance of 350mΩ, the STMicroelectronics SGT350R70GTK delivers low conduction losses and fast switching capabilities thanks to Gallium Nitride (GaN) technology. Packaged in a thermally enhanced DPAK format, the device supports high current handling and improved heat dissipation, suitable for high-density power designs. A low gate charge and output capacitance enable high-frequency operation, ideal for use in power factor correction (PFC), resonant converters, and other advanced power topologies in industrial, telecom, and consumer electronics sectors.

SGT G-HEMT™ E-Mode PowerGaN Transistors

STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.

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