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RD3G03BBGTL1

Name: ROHM Semiconductor RD3G03BBGTL1
Brand: ROHM Semiconductor
SKU: 755-RD3G03BBGTL1
Price: 1.7 GBP
Availability: InStock

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Mouser No:

755-RD3G03BBGTL1

Mfr. No:

RD3G03BBGTL1

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Transistor, MOSFET Nch, 40V(Vdss), 35A(Id), (4.5V Drive)

Datasheet:

RD3G03BBGTL1 Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RD3G03BBGTL1

In Stock: 3,698

Stock:: 3,698 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Packaging:

Full Reel (Order in multiples of 2500)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£1.70	£1.70
	£1.09	£10.90
	£0.745	£74.50
	£0.592	£296.00
	£0.567	£567.00
Full Reel (Order in multiples of 2500)
	£0.544	£1,360.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TO-252-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	65 A
Rds On - Drain-Source Resistance:	6.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	18.2 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	50 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	ROHM Semiconductor
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	16 ns
Forward Transconductance - Min:	10 S
Product Type:	MOSFETs
Rise Time:	14 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	42 ns
Typical Turn-On Delay Time:	12 ns
Part # Aliases:	RD3G03BBG

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Datasheet

RD3G03BBGTL1 Datasheet

Specification Sheets

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Electronic Vehicle (EV) Solutions

ROHM Semiconductor Electronic Vehicle (EV) Solutions are designed to improve efficiency and performance in state-of-the-art EVs. ROHM offers products optimized for various solutions, with a focus on dedicated EV blocks, such as the main inverter, DC-DC converter, onboard charger, and electric compressor.

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ROHM Medium Power MOSFETs are low ON-resistance devices useful for a wide range of applications. These MOSFETs feature a broad lineup with compact, high-power, and complex types to meet various needs. ROHM Medium Power MOSFETs come in high-power small mold packages, and typical applications are for DC/DC converters and load switches.