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PJP125N06SA-AU_T0_006A1

Name: Panjit PJP125N06SA-AU_T0_006A1
Brand: Panjit
SKU: 241-PJP125N06SAAU6A1
Price: 1.96 GBP
Availability: InStock

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Mouser No:

241-PJP125N06SAAU6A1

Mfr. No:

PJP125N06SA-AU_T0_006A1

Mfr.:

Panjit

Description:

MOSFETs 60V N-Channel Enhancement Mode MOSFET, 60 V, 215 A

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

PJP125N06SA-AU_T0_006A1 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Panjit PJP125N06SA-AU_T0_006A1

In Stock: 1,980

Stock:: 1,980 Can Dispatch Immediately

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Factory Lead Time:: 20 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£1.96	£1.96
	£0.969	£9.69
	£0.867	£86.70
	£0.70	£350.00
	£0.658	£658.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220AB-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	215 A
Rds On - Drain-Source Resistance:	2.6 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	82 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	214 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	Panjit
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	37 ns
Product Type:	MOSFETs
Rise Time:	26 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	66 ns
Typical Turn-On Delay Time:	13 ns
Unit Weight:	2.095 g

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Datasheet

PJP125N06SA-AU_T0_006A1 Datasheet (PDF)

CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

60V N-Channel Enhancement Mode MOSFETs

PANJIT 60V N-Channel Enhancement Mode MOSFETs offer low reverse transfer capacitance in an AEC-Q101-qualified DFN5060-8L package. Operating within a -55°C to +150°C junction temperature range, these MOSFETs provide a maximum power dissipation range from 20W to 50W and single pulse avalanche ratings (28A current, 39mJ energy). Applications include automotive LED lighting, wireless chargers, and DC/DC converters.