PJD14P06A-AU_L2_000A1

Panjit
241-PJD14P06AAUL2000
PJD14P06A-AU_L2_000A1

Mfr.:

Description:
MOSFETs 60V P-Channel Enhancement Mode MOSFET

Datasheet:
ECAD Model:
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Learn more about Panjit PJD14P06A-AU_L2_000A1

In Stock: 1,451

Stock:
1,451 Can Dispatch Immediately
Factory Lead Time:
20 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (GBP)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
£0.57 £0.57
£0.355 £3.55
£0.23 £23.00
£0.175 £87.50
£0.169 £169.00
Full Reel (Order in multiples of 3000)
£0.169 £507.00
† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Panjit
Product Category: MOSFETs
RoHS:  
Si
SMD/SMT
TO-252AA-3
P-Channel
60 V
- 20 V, 20 V
2.5 V
- 55 C
+ 150 C
Enhancement
AEC-Q101
Reel
Cut Tape
MouseReel
Brand: Panjit
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Product Type: MOSFETs
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 43 ns
Typical Turn-On Delay Time: 8 ns
Unit Weight: 297 mg
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CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

60V Automotive P-Channel MOSFETs

PANJIT 60V Automotive P-Channel MOSFETs are designed with advanced trench process technology to minimize RDS(ON) while maximizing avalanche ruggedness and space usage. With AEC-Q101 qualification and a high junction temperature of +175°C, these MOSFETs are the optimal choice for automotive design engineers who wish to simplify circuitry while optimizing performance. PANJIT’s P-channel MOSFETs can reduce the circuit complexity of power designs. These components are available in a wide range of compact packages, including SOT-23, SOT-23 6L-1, DFN2020B-6L, DFN3333-8L, DFN5060-8L, and TO-252AA.

60V P-Channel Enhancement Mode MOSFETs

PANJIT 60V P-Channel Enhancement Mode MOSFETs are designed with advanced trench technology to minimize RDS(ON) while maximizing avalanche ruggedness and space usage while maintaining superior switching performance. The devices feature a 200mA to 16A continuous drain current, a 1.1nC to 22nC gate charge, and 300mW to 50W power dissipation. The MOSFETs include advanced Trench Process technology and are optimized for use as relay drivers and line drivers. With AEC-Q101 qualification options and a high junction temperature of 175°C, the MOSFETs are ideal for automotive design engineers to simplify circuitry while optimizing performances.

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