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IXSH65N120L2KHV

Name: IXYS IXSH65N120L2KHV
Brand: IXYS
SKU: 747-IXSH65N120L2KHV
Price: 7.33 GBP
Availability: InStock

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See Product Specifications

Mouser No:

747-IXSH65N120L2KHV

Mfr. No:

IXSH65N120L2KHV

Mfr.:

IXYS

Description:

SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXSH65N120L2KHV Datasheet (PDF)

ECAD Model:

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More Information

Learn more about IXYS IXSH65N120L2KHV

In Stock: 89

Stock:: 89 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£7.33	£7.33
	£5.56	£55.60
	£4.62	£462.00
Full Reel (Order in multiples of 450)
	£4.12	£1,854.00
	£3.68	£3,312.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	65 A
Rds On - Drain-Source Resistance:	52 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	110 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	375 W
Channel Mode:	Enhancement
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	10.5 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	22.1 ns
Factory Pack Quantity:	450
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	19.3 ns
Typical Turn-On Delay Time:	9.6 ns

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Datasheet

IXSH65N120L2KHV Datasheet (PDF)

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CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [R_DS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (I_D) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (V_DSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).