IKW40N120CH7XKSA1

Infineon Technologies
726-IKW40N120CH7XKSA
IKW40N120CH7XKSA1

Mfr.:

Description:
IGBTs 1200 V, 40 A IGBT with anti-parallel diode in TO-247 3pin package

Datasheet:
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In Stock: 684

Stock:
684 Can Dispatch Immediately
Factory Lead Time:
26 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£4.55 £4.55
£2.75 £27.50
£2.26 £226.00
£2.22 £1,065.60

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: IGBTs
RoHS:  
- 20 V, 20 V
IGBT7 H7
Tube
Brand: Infineon Technologies
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: IGBT Transistors
Factory Pack Quantity: 240
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: IKW40N120CH7 SP005551390
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Datasheet

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

IGBT7 Discretes

Infineon Technologies IGBT7 Discretes are the 7th generation of TRENCHSTOP™ IGBTs, created with micro-pattern trench technology. The advanced technology delivers unparalleled control and performance, resulting in significant loss reduction, improved efficiency, and increased power density in applications.

650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors

Infineon Technologies 650V TRENCHSTOP™ IGBT7 H7 Discrete Transistors feature advanced technology, meeting the demand for efficient energy applications. The Infineon Technologies 650V transistors feature a cutting-edge micro-pattern trench design for precise control and high performance. The design results in significant loss reduction, improved efficiency, and enhanced power density across various industries like string inverters, energy storage systems (ESS), EV charging, industrial UPS, and welding.

1200V TRENCHSTOP IGBT7 H7 Discrete Transistors

Infineon Technologies 1200V TRENCHSTOP IGBT7 H7 Discrete Transistors are the 7th generation of 1200V TRENCHSTOP™ IGBTs, which are designed with micro-pattern trench technology. These discrete IGBTs offer a high level of controllability, low conduction losses, low switching losses, improved EMI performance, and humidity robustness under harsh environments. The IGBT7 H7 discrete transistors allow the selection of a low gate resistor (down to 5Ω) while maintaining excellent switching behavior. These transistors are used in fast EV charging, industrial heating and welding, and Uninterruptible Power Supplies (UPS) applications.

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