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GP2T040A120H

Name: SemiQ GP2T040A120H
Brand: SemiQ
SKU: 148-GP2T040A120H
Price: 8.49 GBP
Availability: InStock

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Mouser No:

148-GP2T040A120H

Mfr. No:

GP2T040A120H

Mfr.:

SemiQ

Description:

SiC MOSFETs SiC MOSFET 1200V 40mohm TO-247-4L

Datasheet:

GP2T040A120H Datasheet (PDF)

ECAD Model:

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Learn more about SemiQ GP2T040A120H

In Stock: 13

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£8.49	£8.49
	£6.11	£61.10
	£4.68	£561.60

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	SemiQ
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	63 A
Rds On - Drain-Source Resistance:	37 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	118 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	322 W
Channel Mode:	Enhancement
Brand:	SemiQ
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	14 ns
Forward Transconductance - Min:	16 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	5 ns
Series:	GP2T040A120
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	23 ns
Typical Turn-On Delay Time:	14 ns

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Datasheet

GP2T040A120H Datasheet (PDF)

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

GP2T040A120x SiC MOSFETs

SemiQ GP2T040A120x SiC MOSFETs benefit many applications, including Power Factor Correction, DC-DC Converter Primary Switching, and Synchronous rectification. The GP2T040A120x when combined with Silicon Carbide Schottky diodes offers optimal performance that can be achieved without the trade-offs made with Silicon devices. EV Charging, Solar/Wind, Industrial Controls, and HVAC systems benefit from the increased performance achieved with SemiQ SiC MOSFETs.