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FDMS7650DC

Name: onsemi FDMS7650DC
Brand: onsemi
SKU: 512-FDMS7650DC
Price: 2.18 GBP
Availability: InStock

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See Product Specifications

Mouser No:

512-FDMS7650DC

Mfr. No:

FDMS7650DC

Mfr.:

onsemi

Description:

MOSFETs 30V N-Chnl Dual Cool Pwr Trench MOSFET

Datasheet:

FDMS7650DC Datasheet

ECAD Model:

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More Information

Learn more about onsemi FDMS7650DC

In Stock: 9,847

Stock:: 9,847

Can Dispatch Immediately

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On Order:: 12,000
Factory Lead Time:: 30

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£2.18	£2.18
	£1.66	£16.60
	£1.16	£116.00
	£0.995	£497.50
Full Reel (Order in multiples of 3000)
	£0.935	£2,805.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DualCool-56-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	47 A
Rds On - Drain-Source Resistance:	600 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	1.9 V
Qg - Gate Charge:	147 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	3.3 W
Channel Mode:	Enhancement
Tradename:	PowerTrench
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	onsemi
Configuration:	Single
Country of Assembly:	PH
Country of Diffusion:	TW
Country of Origin:	PH
Fall Time:	20 ns
Forward Transconductance - Min:	225 S
Product Type:	MOSFETs
Rise Time:	28 ns
Series:	FDMS7650DC
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	90 mg

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Datasheet

FDMS7650DC Datasheet

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
ECCN:: EAR99

PowerTrench® MOSFETs

onsemi PowerTrench^® MOSFETs offer a broad portfolio of MOSFETs in the industry. These onsemi MOSFETs offer N-Channel and P-Channel versions optimized for low R_DS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.

Power Trench MOSFETs EXPANSION

ON Semiconductor has expanded its line of Power Trench MOSFETs to offer different drain-to-source voltages, drain current and R_DS(ON). Additional features in this expansion of the ON Semiconductor Power Trench® MOSFETs include advanced package and silicon combination for low R_DS(ON) and high efficiency, thermally efficient packages, and next generation enhanced body diode technology engineered for soft recovery. Applications for these Power Trench® MOSFETs include synchronous rectifiers for DC/DC converters, notebook or networking low side switch, telecom secondary side rectification, load switches, and many more.
Learn More

ON Semiconductor offers both N-Channel and P-Channel versions of MOSFETs using their advanced Power Trench process that has been optimized for low R_DS(ON) switching performance and ruggedness.
View the entire Power Trench® MOSFETs offering

Fairchild PowerTrench MOSFETs

Dual Cool™ MOSFETs

onsemi Dual Cool™ PowerTrench® MOSFETs provide Dual Cool packaging technology that features bottom- and top-side cooling in a PQFN package. The PQFN footprint is an industry standard and provides performance flexibility for the designer. The Dual Cool MOSFETs feature enhanced dual path thermal performance and improved parasitics over wire-bonded predecessors. The use of a heat sink with Dual Cool packaging technology provides even more impressive results. When a heat sink is used with onsemi Dual Cool package technology, synchronous buck converters deliver higher output current and increased power density.