+44 (0) 1494-427500

Part of the TTI Family of Specialists Contact Mouser (London) +44 (0) 1494-427500 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

E4MS036120K

Name: Wolfspeed E4MS036120K
Brand: Wolfspeed
SKU: 941-E4MS036120K
Price: 8.63 GBP
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

941-E4MS036120K

Mfr. No:

E4MS036120K

Mfr.:

Wolfspeed

Description:

SiC MOSFETs SiC, MOSFET, 36mohm, 1200V, TO-247-4, Automotive, Gen4

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

E4MS036120K Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Wolfspeed E4MS036120K

Availability

Stock:: An unexpected error occurred. Please try again later.

900 Can Dispatch in 10 Days

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£8.63	£8.63
	£7.02	£70.20
	£5.85	£702.00
	£5.20	£2,652.00
	£4.86	£4,957.20

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	SiC MOSFETs
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	55 A
Rds On - Drain-Source Resistance:	47 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	2.6 V
Qg - Gate Charge:	88 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	211 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Brand:	Wolfspeed
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	US
Fall Time:	4 ns
Forward Transconductance - Min:	20 S
Product:	SiC MOSFET
Product Type:	SiC MOSFETS
Rise Time:	3 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channe
Type:	Silicon Carbide Power MOSFET
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	12 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

E4MS036120K Datasheet (PDF)

ECCN:: EAR99

1200V E4MS Discrete SiC MOSFETs

Wolfspeed 1200V E4MS Discrete Silicon Carbide (SiC) MOSFETs deliver unparalleled performance in onboard automotive applications. The E4MS family utilizes a fast and soft body diode that enables fast switching with minimal overshoot and ringing, expanding the usable design space for engineers to tune and optimize the performance in the application. The E4MS family provides improved E_on, E_RR, and E_off losses compared to the E3M family of devices, while maintaining a low R_DS(on) temperature coefficient. This balanced approach provides maximum performance and efficiency across a wide range of onboard topologies.