AFGHL25T120RWD

onsemi
863-AFGHL25T120RWD
AFGHL25T120RWD

Mfr.:

Description:
IGBTs FS7 1200V 25A SCR IGBT TO247 3L

Lifecycle:
New At Mouser
Datasheet:
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
More Information
Learn more about onsemi AFGHL25T120RWD

In Stock: 274

Stock:
274 Can Dispatch Immediately
Factory Lead Time:
17 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£6.65 £6.65
£4.56 £45.60
£3.39 £406.80

Product Attribute Attribute Value Select Attribute
onsemi
Product Category: IGBTs
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
1.38 V
20 V
50 A
468 W
- 55 C
+ 175 C
AFGHL25T120RWD
Tube
Brand: onsemi
Continuous Collector Current Ic Max: 25 A
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBTs
Factory Pack Quantity: 30
Subcategory: Transistors
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

Datasheet

USHTS:
8541290095
TARIC:
8541290000
ECCN:
EAR99

AFGHxL25T Single N-Channel 1200V 25A IGBTs

onsemi AFGHxL25T Single N-Channel 1200V 25A Insulated Gate Bipolar Transistors (IGBTs) feature a robust and cost-effective Field Stop VII Trench construction. The onsemi AFGHxL25T provides superior performance in demanding switching applications. Low on-state voltage and minimal switching loss offer optimum hard and soft switching topology performance in automotive applications.

An unexpected error has occurred.


Have a question? Please visit the Help Centre.
For questions about a specific order, please log in to your account.

If you encounter further problems, please contact us on 800-346-6873 or email help@mouser.com.