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1ED3321MC12NXUMA1

Name: Infineon 1ED3321MC12NXUMA1
Brand: Infineon Technologies
SKU: 726-1ED3321MC12NXUMA
Price: 2.48 GBP
Availability: InStock

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Mouser No:

726-1ED3321MC12NXUMA

Mfr. No:

1ED3321MC12NXUMA1

Mfr.:

Infineon Technologies

Description:

Gate Drivers ISOLATED DRIVER

Datasheet:

1ED3321MC12NXUMA1 Datasheet (PDF)

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In Stock: 9,484

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£2.48	£2.48
	£1.87	£18.70
	£1.71	£42.75
	£1.55	£155.00
	£1.46	£365.00
	£1.41	£705.00
Full Reel (Order in multiples of 1000)
	£1.36	£1,360.00
	£1.31	£2,620.00
	£1.27	£6,350.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Gate Drivers
RoHS:
Product:	Isolated Gate Drivers
Type:	High-Side
Mounting Style:	SMD/SMT
Package/Case:	DSO-16
Number of Drivers:	1 Driver
Number of Outputs:	1 Output
Output Current:	8.5 A
Supply Voltage - Min:	2.5 V
Supply Voltage - Max:	5.5 V
Configuration:	Inverting, Non-Inverting
Rise Time:	530 ns
Fall Time:	370 ns
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Series:	Enhanced F3 family
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Country of Assembly:	ID
Country of Diffusion:	DE
Country of Origin:	DE
Logic Type:	CMOS
Maximum Turn-Off Delay Time:	92 ns
Maximum Turn-On Delay Time:	84 ns
Moisture Sensitive:	Yes
Operating Supply Current:	1.1 mA
Output Voltage:	35 V
Pd - Power Dissipation:	810 mW
Product Type:	Gate Drivers
Propagation Delay - Max:	15 ns
Rds On - Drain-Source Resistance:	2.35 Ohms
Shutdown:	Shutdown
Factory Pack Quantity:	1000
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	EiceDRIVER
Part # Aliases:	1ED3321MC12N SP005433357

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Datasheet

1ED3321MC12NXUMA1 Datasheet (PDF)

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CNHTS:: 8542399000
USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

EiceDRIVER™ Enhanced F3 Family

Infineon Technologies EiceDRIVER™ Enhanced F3 Family (1ED332x) are 8.5A single channel isolated drivers in a 300mil DSO-16 package. The 1ED332xMC12N family provides features intended to address the market, including soft-off and hard-off fault turn-offs, IGBT and SiC undervoltage lockout (UVLO) settings, two different output current strengths, and two different output configurations. This F3 product family is an excellent solution for SiC MOSFET short-circuit protection.

2ED EiceDRIVER™ 2-Channel MOSFET Driver ICs

Infineon Technologies 2ED EiceDRIVER™ 2-Channel MOSFET Driver ICs are the crucial link between Control ICs and powerful MOSFET and GaN switching devices. These MOSFET driver ICs enable high system level efficiencies, excellent power density, and consistent system robustness.

EiceDRIVER™ Enhanced Isolated Gate Driver ICs

Infineon Technologies EiceDRIVER™ Enhanced Isolated Gate Driver ICs offer protection features such as DESAT, miller clamp, soft-off for MOSFETs, IGBTs, and SiC MOSFETs. These isolated drivers are based on our Coreless Transformer (CT) technology, enabling a world class Common Mode Transient Immunity (CMTI) of 300kV/μs. The miller clamp and accurate short-circuit protection (DESAT) enables superior application safety by avoiding parasitic turn-on and short-circuit when driving CoolSiC™ SiC MOSFET and TRENCHSTOP™ IGBT7. The EiceDRIVER™isolated drivers provide driving capabilities of up to 9A, making booster solutions obsolete. These single-channel and dual-channel gate driver ICs are available as X3 analog family (1ED34xx) and X3 digital family gate driver ICs. The 1ED34xx and 1ED38xx gate driver ICs offer 9A output current and 40V_max output voltage in a space-saving DS0-16 fine pitch wide-body package with 8mm creepage. These ICs features short-circuit clamping and active shutdown and offer the highest isolation capability for the 1500V DC solar inverter application.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.

1-Channel EiceDRIVER™ MOSFET Gate Driver ICs

Infineon Technologies 1-Channel EiceDRIVER™ MOSFET Gate Driver ICs are the crucial link between control ICs, powerful MOSFET, and GaN switching devices. These gate driver ICs enable high system-level efficiencies, excellent power density, and consistent system robustness.

Isolated Gate Drivers

Infineon Isolated Gate Drivers use magnetically coupled coreless transformer (CT) technology to transfer signals across galvanic isolation. These drivers offer functional basic, reinforced isolated, UL 1577, and VDE 0884 certified products. The isolation allows for very large voltage swings (e.g. ±1200V). These isolated drivers incorporate the most important key features and parameters for MOSFET, IGBT, IGBT modules, SiC MOSFET, and GaN HEMT driving.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.