WP7113PD1BT/BD-P22

Kingbright
604-WP7113PD1BTBDP22
WP7113PD1BT/BD-P22

Mfr.:

Description:
Photodiodes 5mm PHOTODIODE

ECAD Model:
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In Stock: 660

Stock:
660 Can Dispatch Immediately
Factory Lead Time:
6 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£0.629 £0.63
£0.438 £4.38
£0.321 £32.10
£0.269 £134.50
£0.195 £195.00
£0.184 £368.00
£0.173 £865.00

Product Attribute Attribute Value Select Attribute
Kingbright
Product Category: Photodiodes
RoHS:  
Photodiodes
T-1 3/4
Through Hole
940 nm
10 nA
170 V
6 ns
6 ns
20 deg
- 40 C
+ 85 C
Brand: Kingbright
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Packaging: Bulk
Pd - Power Dissipation: 150 mW
Photocurrent: 2 uA
Product Type: Photodiodes
Factory Pack Quantity: 1000
Subcategory: Optical Detectors & Sensors
Unit Weight: 309.803 mg
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Attributes selected: 0

CNHTS:
8541490000
CAHTS:
8541410000
USHTS:
8541410000
JPHTS:
8541400103
TARIC:
8541401000
MXHTS:
8541410100
BRHTS:
85414011
ECCN:
EAR99

NPN Si Phototransistors

Kingbright NPN Si Phototransistors are made with NPN silicon phototransistor chips. These phototransistors are mechanically and spectrally matched to infrared-emitting LED lamps. The NPN Si phototransistors operate at a temperature range from -40°C to +85°C. These phototransistors feature a maximum collector-to-emitter voltage of 30V and an emitter-to-collector voltage of 5V. Typical applications include infrared applied systems, optoelectronic switches, and photodetector control circuits.