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NCP51561DBDWR2G

Name: onsemi NCP51561DBDWR2G
Brand: onsemi
SKU: 863-NCP51561DBDWR2G
Price: 2.69 GBP
Availability: InStock

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Mouser No:

863-NCP51561DBDWR2G

Mfr. No:

NCP51561DBDWR2G

Mfr.:

onsemi

Description:

Galvanically Isolated Gate Drivers 5 kVrms Isolated Dual Channel 4.5/9 A Gate Driver

Datasheet:

NCP51561DBDWR2G Datasheet

ECAD Model:

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More Information

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In Stock: 927

Stock:: 927 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£2.69	£2.69
	£2.02	£20.20
	£1.81	£45.25
	£1.67	£167.00
	£1.59	£397.50
	£1.48	£740.00
Full Reel (Order in multiples of 1000)
	£1.47	£1,470.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	Galvanically Isolated Gate Drivers
RoHS:
Series:	NCP51561
Mounting Style:	SMD/SMT
Package/Case:	SOIC-16
Number of Channels:	2 Channel
Isolation Voltage:	5 kVrms
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Propagation Delay - Max:	58 ns
Rise Time:	11 ns
Fall Time:	10 ns
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Input Voltage - Max:	5 V
Input Voltage - Min:	3 V
Maximum Turn-Off Delay Time:	58 ns
Maximum Turn-On Delay Time:	58 ns
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Output Current:	4.5 A, 9 A
Output Voltage:	18.5 V to 30 V
Product:	Gate Driver
Product Type:	Galvanically Isolated Gate Drivers
Factory Pack Quantity:	1000
Subcategory:	PMIC - Power Management ICs
Supply Voltage - Max:	5 V
Supply Voltage - Min:	3 V

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Datasheet

NCP51561DBDWR2G Datasheet

PCN

Product Change Notification (PDF)

Material Composition Disclosure

USHTS:: 8542390090
ECCN:: EAR99

Pairing Gate Drivers with EliteSiC MOSFETs

Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.

NCP51561 5kVRMS Isolated Dual-Channel Gate Drivers

onsemi NCP51561 5kVRMS Isolated Dual-Channel Gate Drivers are designed for fast switching to drive power MOSFETs and SiC MOSFET power switches. The 4.5A/9.0A NCP51561 Gate Drivers offer short and matched propagation delays. Two independent and 5kV_RMS (UL1577 rating) galvanically isolated gate driver channels can be used in any possible configurations of two low-side, two high-side switches, or a half-bridge driver with programmable dead time. An enable pin shutdown both outputs simultaneously when it is set low. The NCP51561 Gate Drivers integrate other important protection functions such as independent under-voltage lockout for gate drivers and enable functions.

Industrial Motor Drives

onsemi Industrial Motor Drives are designed for global sustainability, supplying efficient, renewable technologies and intelligent power. According to the 2020 Motor System Market Analysis (MSMA), published by the US Department of Energy (DOE), industrial pumps and drives annually consume almost 15% of the total US grid. The 2020 MSMA also estimates that 32.3 million metric tons of CO₂ emissions can be saved annually using VFDs. onsemi manufactures a broad range of VFD semiconductor components, including gate drivers, MOSFETs, IGBTs, and EliteSiC.