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C3M0016120K

Name: Wolfspeed C3M0016120K
Brand: Wolfspeed
SKU: 941-C3M0016120K
Price: 19 GBP
Availability: InStock

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Mouser No:

941-C3M0016120K

Mfr. No:

C3M0016120K

Mfr.:

Wolfspeed

Description:

SiC MOSFETs SiC MOSFET G3 1200V 16mOhms

Datasheet:

C3M0016120K Datasheet

ECAD Model:

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In Stock: 292

Stock:: 292 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£19.00	£19.00
	£13.38	£133.80
	£13.37	£1,604.40

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	115 A
Rds On - Drain-Source Resistance:	28.8 mOhms
Vgs - Gate-Source Voltage:	- 4 V, + 15 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	211 nC
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	556 W
Channel Mode:	Enhancement
Brand:	Wolfspeed
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	13 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	33 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	65 ns
Typical Turn-On Delay Time:	34 ns
Unit Weight:	6 g

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Datasheet

C3M0016120K Datasheet

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

C3M0016120K Silicon Carbide Power MOSFET

Wolfspeed C3M0016120K Silicon Carbide Power MOSFET facilitates C3M™ MOSFET Technology in an optimised package. The C3M0016120K features high blocking voltage with low on-resistance, as well as high-speed switching with low capacitances. The device offers excellent benefits including a reduction in cooling requirements, switching losses, and gate ringing. Additionally, the C3M0016120K provides an increase in power density and system switching frequency.