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TSM110NB04DCR RLG

Name: Taiwan Semiconductor TSM110NB04DCR RLG
Brand: Taiwan Semiconductor
SKU: 821-TSM110NB04DCRRLG
Price: 1.3 GBP
Availability: InStock

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Mouser No:

821-TSM110NB04DCRRLG

Mfr. No:

TSM110NB04DCR RLG

Mfr.:

Taiwan Semiconductor

Description:

MOSFETs 40V, 48A, Dual N-Channel Power MOSFET

Datasheet:

TSM110NB04DCR RLG Datasheet

ECAD Model:

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More Information

Learn more about Taiwan Semiconductor TSM110NB04DCR RLG

In Stock: 3,895

Stock:: 3,895 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£1.30	£1.30
	£0.826	£8.26
	£0.555	£55.50
	£0.438	£219.00
	£0.40	£400.00
Full Reel (Order in multiples of 2500)
	£0.373	£932.50

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PDFN-56-8
Transistor Polarity:	N-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	48 A
Rds On - Drain-Source Resistance:	11 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	25 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	48 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Taiwan Semiconductor
Configuration:	Dual
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	5 ns
Forward Transconductance - Min:	40 S
Product Type:	MOSFETs
Rise Time:	10 ns
Factory Pack Quantity:	2500
Subcategory:	Transistors
Transistor Type:	2 N-Channel
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	7 ns
Part # Aliases:	TSM110NB04DCR
Unit Weight:	372.608 mg

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Datasheet

TSM110NB04DCR RLG Datasheet

Models

SPICE Models

RoHS Certificate (PDF)

CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

Dual N-Channel Power MOSFETs

Taiwan Semiconductor Dual N-Channel Power MOSFETs feature low drain-source on-state resistance, minimizing conductive losses. The devices enable a low gate charge for fast switching. Taiwan Semiconductor Dual N-Channel Power MOSFETs are ideal for BLDC motor control, battery power management, and DC-DC converter applications.