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TSCDT10065G1

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Mouser No:

821-TSCDT10065G1

Mfr. No:

TSCDT10065G1

Mfr.:

Taiwan Semiconductor

Description:

SiC Schottky Diodes 10A, 650V, SiC Schottky Diode

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

TSCDT10065G1 Datasheet

ECAD Model:

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More Information

Learn more about Taiwan Semiconductor TSCDT10065G1

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Taiwan Semiconductor
Product Category:	SiC Schottky Diodes
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-220AC-2
Configuration:	Single
If - Forward Current:	10 A
Vrrm - Repetitive Reverse Voltage:	650 V
Vf - Forward Voltage:	1.34 V
Ifsm - Forward Surge Current:	84 A
Ir - Reverse Current:	20 uA
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q101
Packaging:	Tube
Brand:	Taiwan Semiconductor
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	2000
Subcategory:	Diodes & Rectifiers
Vr - Reverse Voltage:	455 V
Unit Weight:	2.030 g

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USHTS:: 8541100080
TARIC:: 8541100000
ECCN:: EAR99

TSCD 650V SiC Schottky Diodes

Taiwan Semiconductor TSCD 650V SiC Schottky Diodes feature a maximum junction temperature of +175°C and ensure robust performance under challenging conditions. Taiwan Semiconductor TSCD diodes have an MPS structure that enhances ruggedness to forward current surge events, making them suitable for high-demand scenarios. These diodes facilitate high-speed switching and boast a high forward surge capability, enabling efficient operation in various power supply systems. Additionally, the positive temperature coefficient on VF ensures stability across temperature ranges.