TSCDH20065G1

Taiwan Semiconductor
821-TSCDH20065G1
TSCDH20065G1

Mfr.:

Description:
SiC Schottky Diodes 20A, 650V, SiC Schottky Diode

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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In Stock: 290

Stock:
290 Can Dispatch Immediately
Factory Lead Time:
12 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£6.51 £6.51
£4.94 £49.40
£3.75 £375.00

Product Attribute Attribute Value Select Attribute
Taiwan Semiconductor
Product Category: SiC Schottky Diodes
RoHS:  
Through Hole
TO-247-3
Dual Anode Common Cathode
20 A
650 V
1.34 V
88 A
20 uA
AEC-Q101
Tube
Brand: Taiwan Semiconductor
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Product Type: SiC Schottky Diodes
Factory Pack Quantity: 600
Subcategory: Diodes & Rectifiers
Vr - Reverse Voltage: 455 V
Unit Weight: 6.280 g
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Attributes selected: 0

Datasheet

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USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

TSCD 650V SiC Schottky Diodes

Taiwan Semiconductor TSCD 650V SiC Schottky Diodes feature a maximum junction temperature of +175°C and ensure robust performance under challenging conditions. Taiwan Semiconductor TSCD diodes have an MPS structure that enhances ruggedness to forward current surge events, making them suitable for high-demand scenarios. These diodes facilitate high-speed switching and boast a high forward surge capability, enabling efficient operation in various power supply systems. Additionally, the positive temperature coefficient on VF ensures stability across temperature ranges.

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