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STU3N65M6

Name: STMicroelectronics STU3N65M6
Brand: STMicroelectronics
SKU: 511-STU3N65M6
Price: 1.35 GBP
Availability: InStock

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Mouser No:

511-STU3N65M6

Mfr. No:

STU3N65M6

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 1.4 Ohm typ 3.5 A MDmesh M6 Power MOSFET in an IPAK package

Complete Your Design

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

STU3N65M6 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about STMicroelectronics STU3N65M6

In Stock: 2,440

Stock:: 2,440 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 2440 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£1.35	£1.35
	£0.859	£8.59
	£0.571	£57.10
	£0.468	£234.00
	£0.41	£410.00
	£0.377	£1,131.00
	£0.376	£2,256.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-251-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	3.5 A
Rds On - Drain-Source Resistance:	1.5 Ohms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	2.25 V
Qg - Gate Charge:	6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	45 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Series:	Mdmesh M6
Factory Pack Quantity:	3000
Subcategory:	Transistors
Unit Weight:	340 mg

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Datasheet

STU3N65M6 Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8542310000
USHTS:: 8541290065
TARIC:: 8542319000
MXHTS:: 8542310302
ECCN:: EAR99

MDmesh™ M6 MOSFETs

STMicroelectronics MDmesh™ M6 MOSFETs combine a low gate charge (Q_g) with an optimised capacitance profile to target high efficiency on new topologies in power conversion applications. The super-junction MDmesh M6 series offers extremely high-efficiency performance resulting in increased power density and a low gate charge for high frequencies. The M6 series MOSFETs have a breakdown voltage ranging from 600 to 700V. They are available in a wide range of packaging options, including a TO-Leadless (TO-LL) package solution, allowing efficient thermal management. The devices include a wide range of operating voltages for industrial applications, including chargers, adapters, silver box modules, LED lighting, telecoms, servers, and solar.