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STGWT60H65FB

Name: STMicroelectronics STGWT60H65FB
Brand: STMicroelectronics
SKU: 511-STGWT60H65FB
Price: 3.16 GBP
Availability: InStock

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Mouser No:

511-STGWT60H65FB

Mfr. No:

STGWT60H65FB

Mfr.:

STMicroelectronics

Description:

IGBTs 650V 60A HSpd trench gate field-stop IGB

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Datasheet:

STGWT60H65FB Datasheet (PDF)

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In Stock: 199

Stock:: 199 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 199 will be subject to minimum order requirements.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£3.16	£3.16
	£2.01	£20.10
	£1.63	£163.00
	£1.39	£834.00
	£1.32	£1,584.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	IGBTs
RoHS:
Technology:	Si
Package/Case:	TO-3P
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Maximum Gate Emitter Voltage:	- 20 V, 20 V
Continuous Collector Current at 25 C:	80 A
Pd - Power Dissipation:	375 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Series:	STGWT60H65FB
Packaging:	Tube
Brand:	STMicroelectronics
Continuous Collector Current Ic Max:	60 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Gate-Emitter Leakage Current:	250 nA
Product Type:	IGBT Transistors
Factory Pack Quantity:	300
Subcategory:	IGBTs
Unit Weight:	6.756 g

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Datasheet

STGWT60H65FB Datasheet (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.