SCTWA90N65G2V-4
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See Product Specifications
See Product Specifications
511-SCTWA90N65G2V-4
SCTWA90N65G2V-4
Mfr.:
Description:
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
SiC MOSFETs Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 119 A in an HiP247-4 package
Datasheet:
In Stock: 101
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Stock:
-
101 Can Dispatch ImmediatelyAn unexpected error occurred. Please try again later.
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Factory Lead Time:
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22 Weeks Estimated factory production time for quantities greater than shown.
Quantities greater than 101 will be subject to minimum order requirements.
Long lead time reported on this product.
Pricing (GBP)
| Qty. | Unit Price |
Ext. Price
|
|---|---|---|
| £21.28 | £21.28 | |
| £16.09 | £160.90 | |
| £15.40 | £1,540.00 | |
| £14.68 | £8,808.00 |
Similar Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ., 55 A in an HiP247-4 package
- CNHTS:
- 8541290000
- USHTS:
- 8541290065
- ECCN:
- EAR99
