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GANSPIN611TR

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Mouser No:

511-GANSPIN611TR

Mfr. No:

GANSPIN611TR

Mfr.:

STMicroelectronics

Description:

Motor / Motion / Ignition Controllers & Drivers 650 V enhancement mode GaN high-power density half-bridge with high-voltage driver

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New Product:

New from this manufacturer.

Datasheet:

GANSPIN611TR Datasheet (PDF)

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Learn more about STMicroelectronics GANSPIN611TR

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	Motor/Motion/Ignition Controllers & Drivers
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Product:	Half-bridge Driver
Type:	Half-bridge with High-voltage Driver
Output Current:	10 A
Operating Supply Current:	900 uA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 125 C
Mounting Style:	SMD/SMT
Package/Case:	QFN-35
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	SG
Moisture Sensitive:	Yes
Number of Outputs:	1 Output
Operating Frequency:	200 kHz
Product Type:	Motor / Motion / Ignition Controllers & Drivers
Series:	GANSPIN
Factory Pack Quantity:	3000
Subcategory:	PMIC - Power Management ICs
Supply Voltage - Max:	18 V
Supply Voltage - Min:	10.7 V
Tradename:	GaNSPIN
Unit Weight:	194 mg

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Datasheet

GANSPIN611TR Datasheet (PDF)

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USHTS:: 8542390090
MXHTS:: 8542399999
ECCN:: EAR99

GANSPIN611 GaN High-Power Density Half-Bridge

STMicroelectronics GANSPIN611 GaN High-Power Density Half-Bridge is an advanced power system-in-package integrating two enhancement-mode GaN transistors in a half-bridge configuration driven by a state-of-the-art high-voltage, high-frequency gate driver. The integrated power GaNs have an R_DS(ON) of 138mΩ and a 650V drain-source breakdown voltage, while the integrated bootstrap diode can easily supply the high side of the embedded gate driver.