QPD1015

Qorvo
772-QPD1015
QPD1015

Mfr.:

Description:
GaN FETs DC-3.7GHz 65W 50V SSG 20dB GaN

ECAD Model:
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In Stock: 25

Stock:
25
Can Dispatch Immediately
On Order:
19
Factory Lead Time:
20
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:
This Product Ships FREE

Pricing (GBP)

Qty. Unit Price
Ext. Price
£282.84 £282.84
£216.85 £5,421.25

Product Attribute Attribute Value Select Attribute
Qorvo
Product Category: GaN FETs
RoHS:  
SMD/SMT
NI-360
N-Channel
50 V
2.5 A
- 2.8 V
- 40 C
+ 85 C
64 W
Brand: Qorvo
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Development Kit: QPD1015PCB401
Gain: 20 dB
Maximum Operating Frequency: 3.7 GHz
Minimum Operating Frequency: 0 Hz
Moisture Sensitive: Yes
Output Power: 70 W
Packaging: Tray
Product Type: GaN FETs
Series: QPD1015
Factory Pack Quantity: 25
Subcategory: Transistors
Technology: GaN
Transistor Type: HEMT
Vgs - Gate-Source Breakdown Voltage: 145 V
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CNHTS:
8504409190
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399901
ECCN:
EAR99

QPD GaN RF Transistors

Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.