PSMN1R2-80ASEJ

Nexperia
771-PSMN1R2-80ASEJ
PSMN1R2-80ASEJ

Mfr.:

Description:
MOSFETs PSMN1R2-80ASE/SOT8000A/CCPAK12

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.
Mouser does not presently sell this product in your region.

Availability

Stock:

Product Attribute Attribute Value Select Attribute
Nexperia
Product Category: MOSFETs
Delivery Restriction:
 Mouser does not presently sell this product in your region.
RoHS:  
Si
SMD/SMT
CCPAK1212
N-Channel
1 Channel
80 V
375 A
1.18 mOhms
- 20 V, 20 V
3.6 V
233 nC
- 55 C
+ 175 C
935 W
Enhancement
Reel
Cut Tape
Brand: Nexperia
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 70 ns
Product Type: MOSFETs
Rise Time: 57 ns
Factory Pack Quantity: 1000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 133 ns
Typical Turn-On Delay Time: 67 ns
Part # Aliases: 934666614118 934670000000
Products found:
To show similar products, select at least one checkbox
Select at least one checkbox above to show similar products in this category.
Attributes selected: 0

This functionality requires JavaScript to be enabled.

CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

CCPAK ASFETs for Hotswap & Soft Start

Nexperia CCPAK ASFETs for Hotswap and Soft Start offer a reliable linear mode, enhanced SOA, and low RDS(on). The CCPAK ASFETs are designed for carefully controlled in-rush current to protect components on replacement boards inserted into a live system. The devices ensure these always-on systems do not experience any power disruption. The Nexperia CCPAK ASFETs are optimized for strong SOA and low RDS(on) in a single device.

Application-Specific Power MOSFETs

Nexperia Application-Specific Power MOSFETs optimize parameters to match requirements. Nexperia combines proven MOSFET expertise with broad application understanding to create an expanding range of application-specific MOSFETs.