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NGW75T65M3DFPQ

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See Product Specifications

Mouser No:

771-NGW75T65M3DFPQ

Mfr. No:

NGW75T65M3DFPQ

Mfr.:

Nexperia

Description:

IGBTs NGW75T65M3DFP/SOT429-2/TO247-3

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NGW75T65M3DFPQ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia NGW75T65M3DFPQ

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	IGBTs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Package/Case:	TO-247-3
Mounting Style:	Through Hole
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.49 V
Maximum Gate Emitter Voltage:	20 V
Continuous Collector Current at 25 C:	80 A
Pd - Power Dissipation:	529 W
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Nexperia
Continuous Collector Current Ic Max:	225 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Gate-Emitter Leakage Current:	100 nA
Product Type:	IGBTs
Factory Pack Quantity:	30
Subcategory:	Transistors
Part # Aliases:	934668963127 934670000000

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Datasheet

NGW75T65M3DFPQ Datasheet (PDF)

USHTS:: 8541290095
TARIC:: 8541290000

NGWx Trench Field-Stop IGBTs

Nexperia NGWx Trench Field-Stop Insulated-Gate Bipolar Transistors (IGBTs) feature third-generation technology and combine carrier-stored trench-gate and field-stop (FS) structures. Rated up to 175°C, the IGBTs offer optimized IGBT turn-off losses with a 5μs short circuit withstand time. These hard-switching 600V and 30A IGBTs are optimized for high-voltage, low-frequency industrial power inverter, and servo motor drive applications.