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APTGX900A120TDP3EG

Mouser No:

579-TGX900A120TDP3EG

Mfr. No:

APTGX900A120TDP3EG

Mfr.:

Microchip Technology

Description:

IGBT Modules PM-IGBT-TFS-DP3

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

APTGX900A120TDP3EG Datasheet (PDF)

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Learn more about Microchip Technology APTGX900A120TDP3EG

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Microchip
Product Category:	IGBT Modules
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Product:	IGBT Modules
Configuration:	Dual
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.6 V
Continuous Collector Current at 25 C:	900 A
Gate-Emitter Leakage Current:	300 nA
Pd - Power Dissipation:	3.26 kW
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Brand:	Microchip Technology
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	Not Available
Maximum Gate Emitter Voltage:	20 V
Mounting Style:	Press Fit
Product Type:	IGBT Modules
Factory Pack Quantity:	1
Subcategory:	Discrete and Power Modules
Technology:	Si

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Datasheet

APTGX900A120TDP3EG Datasheet (PDF)

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USHTS:: 8541290095
TARIC:: 8541290000

IGBT 7 Power Modules

Microchip Technology Insulated-Gate Bipolar Transistor (IGBT) 7 Power Modules consist of multiple IGBT chips and freewheeling diodes that are encapsulated in a single package, creating a compact and efficient solution for high-power applications. These modules control and convert electrical power and feature increased power capability and lower power losses. The lGBT 7 lineup includes a variety of package types and topologies with a voltage range of 1200V to 1700V and a current range of 50A to 900A. These power modules are an improvement over legacy generations by offering lower V_CE(sat) and V_f, enhanced controllability of dv/dt, 50% higher current capability, overload capacity at T_j +175°C, improved freewheeling diode softness, and simpler driving. These features provide a differentiated value proposition of high power density, reduced system costs, higher efficiency, ease of use, durability, and faster time to market.