3N163 TO-72 4L RoHS

Linear Integrated Systems
722-3N163TO-724LROHS
3N163 TO-72 4L RoHS

Mfr.:

Description:
MOSFETs SINGLE, P-CHANNEL ENHANCEMENT MODE MOSFET

ECAD Model:
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In Stock: 523

Stock:
523 Can Dispatch Immediately
Factory Lead Time:
9 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£7.06 £7.06
£4.88 £48.80
£3.70 £370.00

Product Attribute Attribute Value Select Attribute
Linear Integrated Systems
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-72-4
P-Channel
1 Channel
40 V
30 mA
250 Ohms
- 6.5 V, 6.5 V
5 V
350 mW, 375 mW
Enhancement
Bulk
Brand: Linear Integrated Systems
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: US
Forward Transconductance - Min: 2 mS
Product Type: MOSFETs
Rise Time: 24 ns
Series: 3N163
Factory Pack Quantity: 500
Subcategory: Transistors
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 12 ns
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Attributes selected: 0

CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

3N163 P-Channel Enhancement Mode MOSFETs

Linear Integrated Systems 3N163 P-Channel Enhancement Mode MOSFETs feature high input impedance, high gate breakdown, ultra-low leakage, and low capacitance. These MOSFETs offer -40V drain-source or drain-gate voltage, 50mA drain current, and 375mW (TO-72 case), and 350mW (SOT-143 case) power dissipation. The 3N163 P-Channel MOSFETs are available in the TO-72 RoHS, SOT-143 RoHS package, and as bare die. These MOSFETs are ideal for amplifier and switching applications.