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IR2011SPBF

Name: Infineon IR2011SPBF
Brand: Infineon Technologies
SKU: 942-IR2011SPBF
Price: 1.34 GBP
Availability: InStock

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Mouser No:

942-IR2011SPBF

Mfr. No:

IR2011SPBF

Mfr.:

Infineon Technologies

Description:

Gate Drivers 200V high & low-side ,1A,80ns,DSO-8

Datasheet:

IR2011SPBF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IR2011SPBF

In Stock: 4,204

Stock:: 4,204

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On Order:: 3,676
Factory Lead Time:: 24

Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£1.34	£1.34
	£0.995	£9.95
	£0.819	£20.48
	£0.782	£78.20
	£0.753	£188.25
	£0.723	£361.50
	£0.705	£705.00
	£0.681	£1,702.50
	£0.665	£2,527.00

Alternative Packaging

Mfr. Part No.:

IR2011STRPBF

Packaging:

Reel, Cut Tape, MouseReel

Availability:

In Stock

Price:

£1.35

Min:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	Gate Drivers
RoHS:
Product:	Driver ICs - Various
Type:	High-Side, Low-Side
Mounting Style:	SMD/SMT
Package/Case:	SOIC-8
Number of Drivers:	2 Driver
Number of Outputs:	2 Output
Output Current:	1 A
Supply Voltage - Min:	10 V
Supply Voltage - Max:	20 V
Rise Time:	35 ns
Fall Time:	20 ns
Minimum Operating Temperature:	- 25 C
Maximum Operating Temperature:	+ 125 C
Series:	IR(S)201X
Packaging:	Tube
Brand:	Infineon Technologies
Country of Assembly:	TH
Country of Diffusion:	Not Available
Country of Origin:	TW
Logic Type:	CMOS, LSTTL
Maximum Turn-Off Delay Time:	75 ns
Maximum Turn-On Delay Time:	80 ns
Moisture Sensitive:	Yes
Operating Supply Current:	230 uA
Pd - Power Dissipation:	625 mW
Product Type:	Gate Drivers
Propagation Delay - Max:	80 ns
Shutdown:	No Shutdown
Factory Pack Quantity:	3800
Subcategory:	PMIC - Power Management ICs
Technology:	Si
Tradename:	EiceDRIVER
Unit Weight:	506.600 mg

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Datasheet

IR2011SPBF Datasheet (PDF)

Application Notes

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Technical Resources

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CNHTS:: 8542399000
CAHTS:: 8542310000
USHTS:: 8542390090
KRHTS:: 8542311000
TARIC:: 8542319000
MXHTS:: 8542310302
ECCN:: EAR99

200V Level-Shift Gate Drivers

Infineon 200V Level-Shift Gate Drivers include 3-phase, half-bridge, or high-side and low-side drivers for low (24V, 36V and 48V) and medium voltage (60V, 80V, 100V and 120V) motor control applications. The 3-phase product incorporates Infineon’s unique Silicon-On-Insulator (SOI) level-shift technology. This feature provides functional isolation, industry-leading negative VS robustness and fewer level-shift losses. A solution with integrated Bootstrap Diodes (BSD) is also available, which will reduce BOM costs, simplify the layout and reduce PCB size.

EiceDRIVER™ Gate Driver ICs

Infineon EiceDRIVER™ Gate Driver ICs are designed for MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs devices. EiceDRIVER™ gate drivers provide a wide range of typical output current options, from 0.1A up to 10A. These devices have robust gate drive protection features such as fast short-circuit protection (DESAT), active Miller clamp, shoot-through protection, fault, shutdown, and over current protection. These features make these driver ICs well-suited for both silicon and wide-bandgap power devices, including CoolGaN™, and CoolSiC™. That’s why Infineon offers more than 500 EiceDRIVER™ gate driver IC solutions suitable for any power switch, and any application.