It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IMBG65R040M2HXTMA1

Name: Infineon IMBG65R040M2HXTMA1
Brand: Infineon Technologies
SKU: 726-IMBG65R040M2HXTM
Price: 6.49 GBP
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-IMBG65R040M2HXTM

Mfr. No:

IMBG65R040M2HXTMA1

Mfr.:

Infineon Technologies

Description:

SiC MOSFETs SILICON CARBIDE MOSFET

Datasheet:

IMBG65R040M2HXTMA1 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies IMBG65R040M2HXTMA1

In Stock: 1,450

Stock:: 1,450 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 1000)

Cut Tape

MouseReel™ (+£3.50)

Pricing (GBP)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	£6.49	£6.49
	£4.44	£44.40
	£3.32	£332.00
	£3.20	£1,600.00
Full Reel (Order in multiples of 1000)
	£3.03	£3,030.00
	£2.99	£5,980.00

† A MouseReel™ fee of £3.50 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	49 A
Rds On - Drain-Source Resistance:	49 mOhms
Vgs - Gate-Source Voltage:	- 7 V, + 23 V
Vgs th - Gate-Source Threshold Voltage:	5.6 V
Qg - Gate Charge:	28 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	197 W
Channel Mode:	Enhancement
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	MY
Fall Time:	4.6 ns
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product Type:	SiC MOSFETS
Rise Time:	8.3 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	14.4 ns
Typical Turn-On Delay Time:	8.4 ns
Part # Aliases:	IMBG65R040M2HXTMA1 SP005917207

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IMBG65R040M2HXTMA1 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

CoolSiC™ G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ G2 Silicon Carbide MOSFETs allow an excellent level of SiC performance while fulfilling the highest quality standards in all common power scheme combinations (AC-DC, DC-DC, and DC-AC). SiC MOSFETs offer additional performance for photovoltaic inverters, energy storage systems, EV charging, power supplies, and motor drives, compared to Si alternatives. Infineon CoolSiC G2 MOSFETs further advance the unique XT interconnection technology (e.g., in discrete housings TO-263-7, TO-247-4) that overcomes the common challenge of improving semiconductor chip performance while maintaining thermal capability. The G2 thermal capability is 12% better, boosting the chip figures-of-merit to a robust level of SiC performance.