IXTP01N100D

IXYS
747-IXTP01N100D
IXTP01N100D

Mfr.:

Description:
MOSFETs 0.1 Amps 1000V 110 Rds

ECAD Model:
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In Stock: 412

Stock:
412
Can Dispatch Immediately
On Order:
600
Factory Lead Time:
32
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£5.98 £5.98
£3.29 £32.90
£3.16 £316.00

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
1 kV
400 mA
80 Ohms
- 20 V, 20 V
2 V
5.8 nC
- 55 C
+ 150 C
25 W
Depletion
Tube
Brand: IXYS
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: KR
Fall Time: 64 ns
Forward Transconductance - Min: 100 mS
Product Type: MOSFETs
Rise Time: 10 ns
Series: IXTP01N100
Factory Pack Quantity: 50
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 34 ns
Typical Turn-On Delay Time: 7 ns
Unit Weight: 2 g
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CNHTS:
8541290000
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

Standard N-Channel Depletion Mode Power MOSFETs

IXYS Standard 500V to 1700V N-Channel Depletion Mode Power MOSFETs are depletion mode MOSFETs that require a negative gate bias to turn off. The modules remain on at or above zero gate bias voltage but otherwise have similar MOSFET-like characteristics. The series is suitable for level shifting, solid-state relays, current regulators, and active loads.