+44 (0) 1494-427500

Part of the TTI Family of Specialists Contact Mouser (London) +44 (0) 1494-427500 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IXFN20N120P

Name: IXYS IXFN20N120P
Brand: IXYS
SKU: 747-IXFN20N120P
Price: 30.4 GBP
Availability: OutOfStock

Images are for reference only
See Product Specifications

Mouser No:

747-IXFN20N120P

Mfr. No:

IXFN20N120P

Mfr.:

IXYS

Description:

MOSFET Modules 20 Amps 1200V 0.6 Rds

Datasheet:

IXFN20N120P Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about IXYS IXFN20N120P

Availability

Stock:: Non-Stocked

An unexpected error occurred. Please try again later.
Factory Lead Time:: 32 Weeks Estimated factory production time.

Long lead time reported on this product.

Enter Quantity:

Minimum: 300 Multiples: 10

Unit Price:

£-.--

Ext. Price:

£-.--

Est. Tariff:

This Product Ships FREE

Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£30.40	£9,120.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Screw Mount
Package/Case:	SOT-227-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	570 mOhms
Vgs - Gate-Source Voltage:	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage:	6.5 V
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	595 W
Series:	IXFN20N120
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	70 ns
Height:	12.22 mm
Length:	38.23 mm
Product Type:	MOSFET Modules
Rise Time:	45 ns
Factory Pack Quantity:	10
Subcategory:	Discrete and Power Modules
Tradename:	HiPerFET
Type:	Polar Power MOSFET HiPerFET
Typical Turn-Off Delay Time:	72 ns
Typical Turn-On Delay Time:	49 ns
Width:	25.42 mm
Unit Weight:	30 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXFN20N120P Datasheet

This functionality requires JavaScript to be enabled.

CNHTS:: 8541590000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (t_rr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest R_DS(on), low R_thJC, low Q_g, and enhanced dv/dt capability.