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IXFB210N30P3

Name: IXYS IXFB210N30P3
Brand: IXYS
SKU: 747-IXFB210N30P3
Price: 24.26 GBP
Availability: InStock

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Mouser No:

747-IXFB210N30P3

Mfr. No:

IXFB210N30P3

Mfr.:

IXYS

Description:

MOSFETs N-Channel: Power MOSFET w/Fast Diode

Datasheet:

IXFB210N30P3 Datasheet

ECAD Model:

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More Information

Learn more about IXYS IXFB210N30P3

In Stock: 557

Stock:: 557

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On Order:: 300
Factory Lead Time:: 37

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£24.26	£24.26
	£18.04	£180.40
	£17.31	£1,731.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	PLUS-264-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	300 V
Id - Continuous Drain Current:	210 A
Rds On - Drain-Source Resistance:	14.5 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	5 V
Qg - Gate Charge:	268 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1.89 kW
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	13 ns
Forward Transconductance - Min:	60 S
Product Type:	MOSFETs
Rise Time:	25 ns
Series:	IXFB210N30
Factory Pack Quantity:	25
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	94 ns
Typical Turn-On Delay Time:	46 ns
Unit Weight:	1.600 g

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Datasheet

IXFB210N30P3 Datasheet

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

PolarP3™ HiPerFET™ Power MOSFETs

IXYS PolarP3™ HiPerFET™ Power MOSFETs are the latest addition to the benchmark high-performance Polar-Series for the product portfolio between 300V, 500V, and 600V. The high Figure of Merit (FOM), which is the multiplication of Q_g and R_DS(on), provides an excellent alternative to weaker super junction technologies. These PolarP3 HiPerFETs demonstrate up to a 12% reduction in on-state resistance (R_dson), a 14 percent reduction in gate charge (Q_g) and as high as a 20 percent increase in maximum power dissipation (P_d). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing the total power density of the device.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.