IS67WVH16M8DBLL-166B1LA2

ISSI
870-16M8DBLL166B1LA2
IS67WVH16M8DBLL-166B1LA2

Mfr.:

Description:
SRAM 128Mb, HyperRAM, 16Mbx8, 3.0V, 166MHz, 24-ball TFBGA, RoHS, Automotive

Lifecycle:
New Product:
New from this manufacturer.
ECAD Model:
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In Stock: 364

Stock:
364 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1   Maximum: 200
Unit Price:
£-.--
Ext. Price:
£-.--
Est. Tariff:

Pricing (GBP)

Qty. Unit Price
Ext. Price
£5.84 £5.84
£5.44 £54.40
£5.27 £131.75
£5.14 £257.00
£5.02 £502.00

Product Attribute Attribute Value Select Attribute
ISSI
Product Category: SRAM
RoHS:  
128 Mb
16 M x 8
35 ns
166 MHz
3.6 V
2.7 V
- 40 C
+ 105 C
SMD/SMT
TFBGA-24
Brand: ISSI
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Data Rate: 400 MB/s
Memory Type: PSRAM
Moisture Sensitive: Yes
Product Type: SRAM
Factory Pack Quantity: 480
Subcategory: Memory & Data Storage
Type: Pseudo Static Random Access Memory
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CNHTS:
8542329010
CAHTS:
8542320030
USHTS:
8542320041
TARIC:
8542324500
MXHTS:
8542320299
ECCN:
EAR99

IS67WVH/IS67WVO Memory Devices

ISSI IS67WVH/IS67WVO Memory Devices contain 64Mb/128Mb Pseudo Static Random Access (PSRAM) memory using a self-refresh DRAM array organized as 8M/16M words by 8bits. These memory devices offer up to 400MB/s of high-performance. The IS67WVH HyperRAM™ devices support a HyperBus interface, very low signal count (address, command, and data through 8 DQ pins), and hidden refresh operation. These integrated memory devices feature sequential burst transactions, Read-Write Data Strobe (RWDS), and Double Data Rate (DDR). The IS67WVO memory devices support an Octal Peripheral Interface (OPI) (address, command, and data through 8 SIO pins), very low signal count, and hidden refresh operation. These memory devices are ideal for automotive applications.