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IS43LR32160C-6BLI

Name: ISSI IS43LR32160C-6BLI
Brand: ISSI
SKU: 870-IS43LR32160C6BLI
Price: 6.75 GBP
Availability: InStock

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Mouser No:

870-IS43LR32160C6BLI

Mfr. No:

IS43LR32160C-6BLI

Mfr.:

ISSI

Description:

DRAM 512M, 1.8V, 166Mhz Mobile DDR

Datasheet:

IS43LR32160C-6BLI Datasheet (PDF)

ECAD Model:

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Learn more about ISSI IS43LR32160C-6BLI

In Stock: 395

Stock:: 395 Can Dispatch Immediately

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Factory Lead Time:: 8 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (GBP)

Qty.	Unit Price	Ext. Price
	£6.75	£6.75
	£6.27	£62.70
	£6.09	£152.25
	£5.94	£297.00
	£5.82	£582.00

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ISSI
Product Category:	DRAM
RoHS:
Type:	SDRAM Mobile - LPDDR
Memory Size:	512 Mbit
Data Bus Width:	32 bit
Maximum Clock Frequency:	166 MHz
Package/Case:	BGA-90
Organisation:	16 M x 32
Access Time:	6 ns
Supply Voltage - Min:	1.7 V
Supply Voltage - Max:	1.95 V
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Series:	IS43LR32160C
Packaging:	Tray
Brand:	ISSI
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Moisture Sensitive:	Yes
Mounting Style:	SMD/SMT
Product Type:	DRAM
Factory Pack Quantity:	240
Subcategory:	Memory & Data Storage
Supply Current - Max:	60 mA
Tradename:	RLDRAM2
Unit Weight:	167.700 mg

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Datasheet

IS43LR32160C-6BLI Datasheet (PDF)

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CNHTS:: 8542329000
USHTS:: 8542320028
JPHTS:: 854232021
MXHTS:: 8542320201
ECCN:: EAR99

IS43LR16800F 2Mx16 Mobile DDR SDRAM

ISSI IS43LR16800F 2Mx16 Mobile DDR SDRAM is 134,217,728 bits Mobile Double Data Rate (DDR) Synchronous DRAM (SDRAM) organized as 4 banks of 2,097,152 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock.

Mobile DDR SDRAM

ISSI Mobile DDR SDRAM is organized as 4 banks of 16,777,216 words x 16 bits and uses a double-data-rate architecture to achieve high-speed operation. The Data Input/Output signals are transmitted on a 16-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. ISSI Mobile DDR SDRAM offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are compatible with LVCMOS.